| PART |
Description |
Maker |
| 121-003-32 121-003-16 121-003-20 121-003-24 121-00 |
72 Annular Convoluted Tubing Thermally Stabilized Kynar
|
Glenair, Inc.
|
| 710-861 |
Direct Attachment Guardian Double-T Transition For Series 72 Annular Convoluted Tubing
|
Glenair, Inc.
|
| 121-100-1-1-06CKCE 121-100-2-1-06CKCE 121-100-1-1- |
Helical Convoluted Tubing (MIL-T-81914) Natural or Black PFA, FEP, PTFE, Tefzel (ETFE) or PEEK
|
Glenair, Inc.
|
| 121-101-1-1-06BFSE 121-101-2-1-06BFSE 121-101-1-1- |
Helical Convoluted Tubing (MIL-T-81914) Natural or Black PFA, FEP, PTFE, Tefzel (ETFE) or PEEK
|
Glenair, Inc.
|
| GLT5640AL16P-5.5TC GLT5640AL16P-6TC GLT5640AL16P-7 |
TUBE, SHR, POL, 063/031, BLK, 017, 600V, 135C, (934872) 4米16个CMOS同步动态随机存储器
TUBING SHRINK BLK IRRAD-PFIN 1/16 ID
HEAT SHRINK TUBING, 2.4MM POLYOLEFIN, BLACK
TBG H/SHRINK FP 1/16 BLK
HEAT SHRINK TUBING 1/8 IN
SHRINK TUBING D=12
TUBING, HEAT SHRINK, 0.187 ID UL224 BLK
SHRINK TUBING, .093X..046IDX.020, BLK
4M X 16 CMOS Synchronous Dynamic RAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| BD520 BD516 BD518 BD516-5 BD518-1 BD520-5 |
PNP silicon annular amplifier transistor. 10 W, 60 V.
PNP silicon annular amplifier transistor. 10 W, 80 V.
PNP silicon annular amplifier transistor. 10 W, 45 V.
PNP ILICON ANNULAR AMPLIFIER TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
| 2N6478 2N6477 |
Shrink Tubing; Tubing Size Diameter:0.5"; Wall Thickness Recovered Nominal:0.055"; Inner Diameter Max Recovered:0.195"; Expanded Inner Diameter:0.500"; Material:Polyolefin 中功率硅NPN晶体
MEDIUM POWER SILICON NPN TRANSISTORS
|
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| MAF84X1 MAB84X1 MAF84AX1 |
Shrink Tubing; Tubing Size Diameter:1"; Shrink Temperature:100 C; Wall Thickness Recovered Nominal:0.035"; Inner Diameter Max Recovered:0.500"; Expanded Inner Diameter:1.000"; Material:Polyolefin; Approval Bodies:UL, CSA 单芯位微控制
SINGLE CHIP 8 BIT MICROCONTROLLER
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| 2SC5809 |
Shrink Tubing; Tubing Size Diameter:0.75"; Wall Thickness Recovered Nominal:0.065"; Inner Diameter Max Recovered:0.313"; Expanded Inner Diameter:0.750"; Material:Polyolefin 3 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
Power Device - Power Transistors - Swicthing
|
Panasonic, Corp.
|
| MD7003A MD7003AF MD7003F MD7003B MQ7003 |
MULTIPLE SILICON ANNULAR TRANSISTORS
|
New Jersey Semi-Conduct...
|
| MDA918 MD918A MD918B MD918BF MD918AF MD918F |
MULTIPLE SILICON ANNULAR TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
|
